EMZB21C03G Hoja de datos - Excelliance MOS Corp.
Número de pieza
EMZB21C03G
Fabricante

Excelliance MOS Corp.
Product Summary:
N‐CH P‐CH
BVDSS 30V ‐30V
RDSON (MAX.) 21mΩ 35mΩ
ID 7.5A ‐6A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ESD Protection
Número de pieza
componentes Descripción
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Fabricante
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Unspecified
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.