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4N60B Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.

SWD4N60 image

Número de pieza
4N60B

componentes Descripción

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page
7 Pages

File Size
915.3 kB

Fabricante
SEMIPOWER
Xian Semipower Electronic Technology Co., Ltd. 

General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.


FEATUREs
■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested

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