2SB645 Hoja de datos - New Jersey Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
• High Power Dissipation- : Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD665

APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 200W high-fidelity audio frequency amplifier output stage.