2N7588T3 Hoja de datos - International Rectifier

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.

FEATUREs:
◾ Low RDS(on)
◾ Fast Switching
◾ Single Event Effect (SEE) Hardened
◾ Low Total Gate Charge
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Hermetically Sealed
◾ Ceramic Eyelets
◾ Electrically Isolated
◾ Light Weight