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PHD96NQ03LT

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

PHP/PHB/PHD96NQ03LT

N-channel enhancement mode field-effect transistor

80

IS VGS = 0 V

(A)

60

03af15

40

20

0

0

175 ºC

0.4

Tj = 25 ºC

0.8

1.2

VSD (V)

10

VGS

(V)

8

ID = 50 A

Tj = 25 ºC

VDD = 15 V

6

4

2

0

0

20

03af17

40

60

QG (nC)

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 50 A; VDD = 15 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 08963

Product data

Rev. 03 — 23 October 2001

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

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