PHD96NQ03LT Ver la hoja de datos (PDF) - Philips Electronics
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PHD96NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03af09
40
40
0
0
50
100
150
200
Tmb (oC)
Pder = P-------P----t--o--t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (ºC)
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
102
10
DC
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
03af11
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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