FDB14N30 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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fabricante
FDB14N30 Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
* Notes :
1. V = 0 V
GS
2. ID = 250μA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 7 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
Operation in This Area
100
is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
PDM
t1
1 0 0 t2
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
PDM
t1
t2
* N otes :
1. Z (t) = 0.89 oC /W M ax.
θJC
2. D u ty F a c to r, D = t1/t2
3. T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W a ve P ulse D u ra tio n [se c]
FDB14N30 Rev. A
4
www.fairchildsemi.com
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