FDB14N30 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
FDB14N30 Datasheet PDF : 8 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
10-1
10-1
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.3
1.2
1.1
1.0
0.9
VGS = 10V
0.8
0.7
0.6
0.5
VGS = 20V
0.4
0.3
0.2
* Note : TJ = 25oC
0.1
0
5
10
15
20
25
30
35
40
45
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note :
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
* Notes :
1. V = 40V
DS
2. 250μs Pulse Test
4
6
8
10
12
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 60V
VDS = 150V
8
VDS = 240V
6
4
2
* Note : ID = 14A
0
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
FDB14N30 Rev. A
3
www.fairchildsemi.com
Share Link: 