DXT13003DG-13 Ver la hoja de datos (PDF) - Diodes Incorporated.
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DXT13003DG-13 Datasheet PDF : 6 Pages
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DXT13003DG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC current transfer Static ratio (Note 10)
Collector-Emitter Saturation Voltage (Note 10)
Symbol
BVCES
BVCEO
BVEBO
ICEV
hFE
VCE(sat)
Min
Typ
700
−
450
−
9
−
−
−
20
-
16
−
5.0
−
−
−
−
−
Base-Emitter Saturation Voltage (Note 10)
−
−
VBE(sat)
−
−
Output Capacitance
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
Cob
−
18
fT
4
−
ton
−
−
ts
−
−
tf
−
−
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
Max
−
−
−
10
40
30
25
0.3
0.4
1.0
1.2
−
−
0.7
3.0
0.35
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Unit
V
V
V
µA
−
V
V
pF
MHz
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 700V, VBE = -1.5V
IC = 20mA, VCE = 10V
IC = 0.5A, VCE = 2V
IC = 1.0A, VCE = 2V
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
VCB = 10V, f = 0.1MHz
IC = 0.1A, VCE = 10V
µs IC = 1A,VCC = 125V, IB1 = 0.2A,
IB2 = -0.2A
DXT13003DG
Datasheet Number: DS37262 Rev. 1 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
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