TPC8303 Datasheet - Toshiba
MFG CO.

Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
• Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.)
• High forward transfer admittance : |Yfs| = 7 S (typ.)
• Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSII) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba