TPC8108 Datasheet - Toshiba
MFG CO.

Toshiba
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 24 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS= −30 V)
• Enhancement-mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −1mA)
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Part Name
Description
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MFG CO.
Silicon P Channel MOS Type (U-MOSIII) Field Effect Transistor
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2014 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSIII) ( Rev : Old_V )
Toshiba