TPC8105-H Datasheet - Toshiba
MFG CO.
Toshiba
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
● Small footprint due to small and thin package
● High speed switching
● Small gate charge : Qg = 32 nC (typ.)
● Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.)
● High forward transfer admittance : |Yfs| = 12 S (typ.)
● Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
● Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Part Name
Description
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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Toshiba