TPC6104 Datasheet - Toshiba
MFG CO.
Toshiba
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON)= 33 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS= −10 µA (max) (VDS= −20 V)
• Enhancement mode: Vth= −0.5 to −1.2 V
(VDS= −10 V, ID= −200 µA)
Part Name
Description
View
MFG CO.
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2014 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSIII) ( Rev : Old_V )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
Toshiba