TPC6102(2000) Datasheet - Toshiba
MFG CO.

Toshiba
NOTEBOOK PC
PORTABLE EQUIPMENT APPLICATIONS
• Low Drain - Source ON Resistance: RDS (ON) = 48 mΩ (Model:.)
• High Forward Transfer Admittance: |Yfs| = 6 S (Typ.)
• Low Leakage Current: IDSS = −10 μA (Max.) (VDS = −30 V)
• Enhancement - Model: Vth = −0.8 ~ −2.0 V (VDS = −10 V, ID = −1 mA)
Part Name
Description
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MFG CO.
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
Toshiba