datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Toshiba  >>> TPC6101 PDF

TPC6101 Datasheet - Toshiba

TPC6101 image

Part Name
TPC6101

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
150.6 kB

MFG CO.
Toshiba
Toshiba 

Notebook PC Applications
Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 8.2 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)


Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
PDF
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSII) ( Rev : 2000 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
PDF
Toshiba

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]