TPC6101 Datasheet - Toshiba
MFG CO.

Toshiba
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 8.2 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOSII) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Toshiba