TK5A500 Datasheet - Toshiba
MFG CO.
Toshiba
Search Part number : TK5A500 -> Correct Part number : TDTK5A50D
• Low drain-source ON-resistance: RDS (ON)= 1.3 Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
• Enhancement mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
