STB25NM60ND Datasheet - Inchange Semiconductor
MFG CO.
Inchange Semiconductor
DESCRIPTION
• Low Drain-Source On-Resistance
FEATURES
• Drain Current –ID=21A@ TC=25℃
• Drain Source Voltage-
: VDSS= 600V(Min)
• Static Drain-Source On-Resistance
: RDS(on) = 160mΩ (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Switching application
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