SSM6P28TU Datasheet - Toshiba
MFG CO.
Toshiba
High-Speed Switching Applications
Power Management Switch Applications
• 1.8V drive
• P-ch 2-in-1
• Low ON-resistance: Ron = 460 mΩ (max) (@VGS = −1.8 V)
Ron = 306 mΩ (max) (@VGS = −2.5 V)
Ron = 234 mΩ (max) (@VGS = −4.0 V)
Part Name
Description
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MFG CO.
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
