SI6463DQ Datasheet - Fairchild Semiconductor

General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• –8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V
                     RDS(ON) = 0.018 Ω @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management