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SI4936CDY Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Part Name
SI4936CDY

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page
4 Pages

File Size
1.2 MB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 

Description:
   This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.


FEATUREs:
1) VDS=30V,ID=6.9A,RDS(ON)<32mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.


Part Name
Description
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MFG CO.
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
PDF
Unspecified

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