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SI4936CDY PDF
SI4936CDY Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
MFG CO.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description:
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs:
1) VDS=30V,ID=6.9A,RDS(ON)<32mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Part Name
Description
View
MFG CO.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified