SI4599DY Datasheet - ETC
MFG CO.
ETC
[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Description:
This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.
FEATUREs:
N-Channel: VDS=40V,ID=6.7A,RDS(ON)<32mΩ @VGS=10V
P-Channel: VDS=-40V,ID=-7.2A,RDS(ON)<40mΩ @VGS=-10V
1) High Power and current handing capability.
2) Lead free product is acquired.
3) Surface Mount Package.
Part Name
Description
View
MFG CO.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.