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SI4599DY Datasheet - ETC

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Part Name
SI4599DY

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page
5 Pages

File Size
1.6 MB

MFG CO.
ETC
ETC 

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description:
This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.


FEATUREs:
   N-Channel: VDS=40V,ID=6.7A,RDS(ON)<32mΩ @VGS=10V
   P-Channel: VDS=-40V,ID=-7.2A,RDS(ON)<40mΩ @VGS=-10V
   1) High Power and current handing capability.
   2) Lead free product is acquired.
   3) Surface Mount Package.

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Part Name
Description
View
MFG CO.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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