PHB33NQ20T Datasheet - NXP Semiconductors.

General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
■ Higher operating power due to low thermal resistance
■ Low conduction losses due to low on-state resistance
■ Simple gate drive required due to low gate charge
■ Suitable for high frequency applications due to fast switching characteristics

APPLICATIONs
■ DC-to-DC primary side switching