Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C.

FEATUREs:
● Designed Especially for High–Volume Systems
● Readily Adaptable for PC Boards and Metal Heat Sinks
● Low Switching Losses
● High di/dt and dv/dt Capabilities
● Shorted Emitter Gate–Cathode Construction
● Forward and Reverse Gate Dissipation Ratings
● All–Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics
● Direct–Soldered Internal Construction Assures Exceptional Resistance to Fatigue
● Symmetrical Gate–Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation
● All–Welded Construction and Hermetic Sealing
● Low Leakage Currents, Forward and Reverse
● Low Forward Voltage Drop at High Current Levels
● Low Thermal Resistance