NTE2504 Datasheet - NTE Electronics
MFG CO.
NTE Electronics
Features:
• Large Current Capacity (IC = 2A)
• Adoption of MBIT Process
• High DC Current Gain: hFE = 800 to 3200
• Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V
Part Name
Description
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MFG CO.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
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