NTE221 Datasheet - NTE Electronics
MFG CO.

NTE Electronics
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
FEATUREs:
• Extremely Low Feedback Capacitance
• High Power Gain
Part Name
Description
View
MFG CO.
N-CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)
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INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUIT FOR TV AND RADIO RECEIVERS
Unspecified
INTEGRATED CIRCUITS FOR TV AND RADIO RECEIVERS
Unspecified
INTETRATED CIRCUITS FOR TV AND RADIO RECEIVERS
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