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NSBA113EDXV6
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MFG CO.
ON Semiconductor
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NSBA113EDXV6 Datasheet - ON Semiconductor
ON Semiconductor
Dual PNP Bias Resistor Transistors R1 = 1 kΩ, R2 = 1 kΩ
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
FEATUREs
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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MFG CO.
PNP Transistors with Monolithic Bias Resistor Network Digital Transistors (BRT) R1 = 1 kΩ, R2 = 1 kΩ
ON Semiconductor
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
Nexperia B.V. All rights reserved
Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = ∞ kΩ ( Rev : 2014 )
ON Semiconductor
Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = ∞ kΩ ( Rev : 2012 )
ON Semiconductor
PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Nexperia B.V. All rights reserved
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