NJW0302GD Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -350V(Min)
• Good Linearity of hFE
• Complement to Type NJW0281GD
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high fidelity audio amplifier and
other linear applications
Part Name
Description
View
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