MTP3N60 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 2 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER ENVIRONMENT
Part Name
Description
View
MFG CO.
N - CHANNEL ENHANCEMENTMODE POWER MOS TRANSISTOR
New Jersey Semiconductor
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics