Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate

This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
• Designers Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads