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MS3024 Datasheet - Advanced Power Technology

MS3024 image

Part Name
MS3024

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page
4 Pages

File Size
84 kB

MFG CO.
APT
Advanced Power Technology  

DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN microwave transistor that utilizes a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MS3024 was designed for Class C amplifier applications in the 1.0 – 2.0 GHz frequency range.


FEATUREs
• EMITTER BALLASTED
• INFINITE VSWR CAPABILITY AT RATED CONDITIONS
• REFRACTORY/GOLD METALLIZATION
• HERMETIC STRIPACÒ PACKAGE
• POUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz


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STMicroelectronics
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STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
PDF
STMicroelectronics

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