MS3024 Datasheet - Advanced Power Technology
MFG CO.
Advanced Power Technology
DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN microwave transistor that utilizes a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MS3024 was designed for Class C amplifier applications in the 1.0 – 2.0 GHz frequency range.
FEATUREs
• EMITTER BALLASTED
• INFINITE VSWR CAPABILITY AT RATED CONDITIONS
• REFRACTORY/GOLD METALLIZATION
• HERMETIC STRIPACÒ PACKAGE
• POUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz
Part Name
Description
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MFG CO.
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics