GENERAL DESCRIPTION
The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term reliability and superior ruggedness.

FEATURES
• GOLD METALLIZATIOM
• POUT = 3 W MINIMUN
• 2.0 GHz
• GP = 7.8 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION