PNP SILICON ANNULAR AMPLIFIER TRANSISTORS

. . . designed for general-purpose, high-voltage ampl fier and driver applications.

• High Collector-Emitter Breakdown Voltage -
   BVCEO = 60Vdc<Min) @ lc = 1 .0 mAdc - MPS-U55
                    80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56
• High Power Dissipation - Prj = 1 0 W @ TC = 25°C
• Complements to NPN MPS-U05 and MPS-U06