Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.

• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 160 μJ/A typical at 125°C
• High Short Circuit Capability – 10 μs minimum
• Robust High Voltage Termination