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LS310 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
FEATURES
VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA
TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP.
HIGH fT 250MHz TYP. @ 1mA
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MFG CO.
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components