VDSS = 600 V
ID25 = 18 A
RDS(on) ≤ 0.56 Ω
PDC = 350

Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications

FEATUREs
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials

Advantages
• High Performance RF Z-MOS™
• Optimized for RF and high speed
• Common Source RF Package
A = Gate Source Drain
B = Drain Source Gate
• Isolated Package, no insulator required