Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
   
• Low RDs<on)
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• bss. Vos(on), Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling