FDS6576 Datasheet - Fairchild Semiconductor

General Description
This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

FEATUREs
• –11 A, –20 V. RDS(ON) = 0.014 Ω @ VGS = –4.5 V RDS(ON) = 0.020 Ω @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery applications.
• Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.
• RoHS Compliant.

APPLICATIONs
• Load switch
• Battery protection
• Power management