FDG6332C_F085 Datasheet - Fairchild Semiconductor

General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

FEATUREs
• Q1 0.7 A, 20V.
   RDS(ON) = 300 mW @ VGS = 4.5 V
   RDS(ON) = 400 mW @ VGS = 2.5 V
• Q2 –0.6 A, –20V.
   RDS(ON) = 420 mW @ VGS = –4.5 V
   RDS(ON) = 630 mW @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• SC70-6 package: small footprint (51% smaller than
   SSOT-6); low profile (1mm thick)
• Qualified to AEC Q101
• RoHS Compliant

APPLICATIONs
• DC/DC converter
• Load switch
• LCD display inverter