FDC6036P Datasheet - Fairchild Semiconductor

General Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

FEATUREs
• –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.8 V
• Low gate charge, High Power and Current handling capability
• High performance trench technology for extremely low RDS(ON)
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

APPLICATIONs
• Battery management/Charger Application
• Load switch