Description
The A1211 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.
This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

FEATUREs
• HIGH EFFICIENCY: 16 mA at +5 Vdc
• LOW NOISE FIGURE: 2.8 dB at 5 Vdc (TYP.)
• LOW CURRENT DRAIN: 15.5 mA at 5 Vdc
• MEDIUM OUTPUT POWER: +11 dBm at 8 Vdc (TYP.)
• MEDIUM THIRD I.P.: +25 dBm at 8 Vdc