BUK7880-55(2011) Datasheet - NXP Semiconductors.

General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

FEATUREs and benefits
■ AEC Q101 compliant
■ Electrostatically robust due to integrated protection diodes
■ Low conduction losses due to low on-state resistance

APPLICATIONs
■ Automotive and general purpose power switching