BRG10N120D Datasheet - Foshan Blue Rocket Electronics Co.,Ltd.
MFG CO.
Foshan Blue Rocket Electronics Co.,Ltd.
Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.
FEATUREs
Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.
APPLICATIONs
Eddy-current heating.
Part Name
Description
View
MFG CO.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE
Omnirel Corp => IRF
Silicon PNP transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Silicon PNP transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.