Part Name
BFS540
Description
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MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz
• High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz
APPLICATIONS
• Designed for RF wideband amplifier applications such as
satellite TV systems and RF portable communication
equipment with signal frequencies up to 2 GHz.