Description：
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON)， low gate charge. This device may be usedto form a level shifted highside switch, and for a host ofother application.

FEATUREs：
1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ @VGS=10V
   P-Channel:VDS=-30V,ID=-6A,RDS(ON)<65mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.