AO4930 Datasheet - Alpha and Omega Semiconductor
MFG CO.
Alpha and Omega Semiconductor
General Description
The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4930 is Pb-free (meets ROHS & Sony 259 specifications).
FEATUREs
FET1 FET2
VDS (V) = 30V VDS(V) = 30V
ID = 9.5A ID=9A (VGS = 10V)
RDS(ON) < 13.5mΩ <15.8mΩ (VGS = 10V)
RDS(ON) < 16mΩ <23mΩ (VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
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Part Name
Description
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MFG CO.
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor