Description：
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application.

FEATUREs：
   N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ @VGS=4.5V
   P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10
   1) Low gate charge.
   2) Green device available.
   3) Advanced high cell denity trench technology for ultra RDS(ON).
   4) Excellent package for good heat dissipation.