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AO4612 Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Part Name
AO4612

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page
7 Pages

File Size
1.6 MB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 

Description:
This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.


FEATUREs:
   N-Channel: VDS=60V,ID=4.5A,RDS(ON)<40mΩ @VGS=10V
   P-Channel: VDS=-60V,ID=-4.1A,RDS(ON)<90mΩ @VGS=-10V
   1) High Power and current handing capability.
   2) Lead free product is acquired.
   3) Surface Mount Package.


Part Name
Description
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MFG CO.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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