Description
The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

FEATUREs
• LOW NOISE: 3.5 dB (TYP.)
• HIGH EFFICIENCY: 15 mA (TYP.) @ +5 Volts
• GOOD DYNAMIC RANGE: 102.5 dB (TYP.) in 1 MHz BW
• LOW VSWR: <1.5:1 (TYP.)