30F123 Datasheet - Toshiba
MFG CO.
Toshiba
30F123/ GT30F123 IGBT.
• Breakdown Voltage VCES (V) @Ta = 25˚C : 300V
• IGBT Current Rating IC (A) @Ta = 25˚C : 200A
• Insulated Gate Bipolar Transistor
• Case Style: TO220SIS/ Short Leads
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