2SJ108 Datasheet - Toshiba
MFG CO.
Toshiba
Low Noise Audio Amplifier Applications
• Recommended for first stages of EQ amplifiers and MC head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS= −10 V, VGS= 0, IDSS= −3 mA)
• Low noise: En = 0.95 nV/√Hz1/2(typ.)
(VDS= −10 V, ID= −1 mA, f = 1 kHz)
• High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)
• Complementary to 2SK370
• Small package
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
